30 GHz SPDT switch design using 0.15 μm GaAs technology for microwave applications

Author

Sanusi, Rasidah ; Ismail, Mohd Azmi ; Norhapizin, K. ; Rahim, Abdul ; Marzuki, Arjuna ; Yahya, Mohamed Razman

Author_Institution

TM R&D Sdn. Bhd., TM R&D Innovation Centre, Cyberjaya

fYear

2008

fDate

25-27 Nov. 2008

Firstpage

130

Lastpage

133

Abstract

In this paper, very low loss and high isolation single pole double throw (SPDT) switch design for millimeter wave applications using pseudomorphic high-electron mobility transistor (pHEMT) is presented. The MMIC switch design is developed using a commercial 0.15 mum GaAs pHEMT technology. At the operating frequency of 30 GHz, the SPDT switch has 1.948 dB insertion loss and 24.526 dB of isolation. It also demonstrates 26.85 dBm of input P1dB gain compression point (P_1dB) and 23.28 dBm of output P1dB.

Keywords

III-V semiconductors; MMIC; MMIC amplifiers; gallium arsenide; high electron mobility transistors; microwave switches; GaAs; MMIC switch design; SPDT switch design; frequency 30 GHz; gain 1 dB; loss 1.948 dB; loss 24.526 dB; microwave applications; millimeter wave applications; pHEMT technology; pseudomorphic high-electron mobility transistor; single pole double throw; size 0.15 mum; Gallium arsenide; HEMTs; Isolation technology; MODFETs; Microwave technology; Microwave transistors; Millimeter wave technology; Millimeter wave transistors; PHEMTs; Switches;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Electronics, 2008. ICSE 2008. IEEE International Conference on

Conference_Location

Johor Bahru

Print_ISBN

978-1-4244-3873-0

Electronic_ISBN

978-1-4244-2561-7

Type

conf

DOI

10.1109/SMELEC.2008.4770292

Filename

4770292