Title :
30 GHz SPDT switch design using 0.15 μm GaAs technology for microwave applications
Author :
Sanusi, Rasidah ; Ismail, Mohd Azmi ; Norhapizin, K. ; Rahim, Abdul ; Marzuki, Arjuna ; Yahya, Mohamed Razman
Author_Institution :
TM R&D Sdn. Bhd., TM R&D Innovation Centre, Cyberjaya
Abstract :
In this paper, very low loss and high isolation single pole double throw (SPDT) switch design for millimeter wave applications using pseudomorphic high-electron mobility transistor (pHEMT) is presented. The MMIC switch design is developed using a commercial 0.15 mum GaAs pHEMT technology. At the operating frequency of 30 GHz, the SPDT switch has 1.948 dB insertion loss and 24.526 dB of isolation. It also demonstrates 26.85 dBm of input P1dB gain compression point (P1dB) and 23.28 dBm of output P1dB.
Keywords :
III-V semiconductors; MMIC; MMIC amplifiers; gallium arsenide; high electron mobility transistors; microwave switches; GaAs; MMIC switch design; SPDT switch design; frequency 30 GHz; gain 1 dB; loss 1.948 dB; loss 24.526 dB; microwave applications; millimeter wave applications; pHEMT technology; pseudomorphic high-electron mobility transistor; single pole double throw; size 0.15 mum; Gallium arsenide; HEMTs; Isolation technology; MODFETs; Microwave technology; Microwave transistors; Millimeter wave technology; Millimeter wave transistors; PHEMTs; Switches;
Conference_Titel :
Semiconductor Electronics, 2008. ICSE 2008. IEEE International Conference on
Conference_Location :
Johor Bahru
Print_ISBN :
978-1-4244-3873-0
Electronic_ISBN :
978-1-4244-2561-7
DOI :
10.1109/SMELEC.2008.4770292
