Highly robust X-band LNA with extremely short recovery time

Author

Rudolph, Matthias ; Dewitz, Mike ; Liero, Armin ; Khalil, Ibrahim ; Chaturvedi, Nidhi ; Wipf, Christian ; Bertenburg, Ralf M. ; Miller, Justin ; Wurfl, Joachim ; Heinrich, Wolfgang ; Tränkle, Günther

Author_Institution

Ferdinand-Braun-Inst. fur Hochstfrequenztechnik (FBH), Berlin, Germany

fYear

2009

fDate

7-12 June 2009

Firstpage

781

Lastpage

784

Abstract

GaN-based low-noise amplifiers (LNAs) recently were shown to provide high ruggedness together with low noise figure. These LNAs allow for simplified receiver architectures, e.g., since no limiter is required to protect the input. This paper for the first time presents an investigation of the recovery time of a highly rugged GaN LNA. The X-band LNA is shown to survive input overdrive powers up to 46 dBm under pulsed and 40 dB under cw conditions, with a noise figure of 2.8 dB. Extremely short recovery times below 10 ns were simulated and proved to be below the measurement resolution.

Keywords

III-V semiconductors; low noise amplifiers; microwave amplifiers; wide band gap semiconductors; GaN; X-band LNA; frequency 8 GHz to 12 GHz; measurement resolution; noise figure; receiver architectures; recovery time; Gallium nitride; Integrated circuit noise; Low-noise amplifiers; MMICs; Microwave amplifiers; Noise figure; Protection; Pulse amplifiers; Robustness; Semiconductor device noise; Amplifier noise; Integrated circuit noise; MMIC amplifiers; Microwave FET amplifiers; Noise; Semiconductor device noise;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 2009. MTT '09. IEEE MTT-S International

Conference_Location

Boston, MA

ISSN

0149-645X

Print_ISBN

978-1-4244-2803-8

Electronic_ISBN

0149-645X

Type

conf

DOI

10.1109/MWSYM.2009.5165813

Filename

5165813