Title :
The computational intelligence in simulation of DG MOSFET: Application to the simulation of the nanoscale CMOS circuit
Author :
Hayati, Mohsen ; Seifi, Majid ; Rezaei, Abbas
Abstract :
In this paper, the simulation of DG MOSFET based on ANFIS and ANN models are carried out and their results are compared. These models can reduce the computational time while keeping the accuracy of physics-based models, like non-equilibrium Greenpsilas function (NEGF) formalism. The compact models with computational intelligent allow for fast and accurate system level simulation of the nanoscale circuits.
Keywords :
CMOS integrated circuits; Green´s function methods; MOSFET; circuit simulation; nanoelectronics; semiconductor device models; ANFIS; ANN models; DG MOSFET; circuit simulation; computational intelligence; nanoscale CMOS circuit; nanoscale circuits; non-equilibrium Greenpsilas function formalism; semiconductor device model; system level simulation; Adaptive systems; Artificial neural networks; Circuit simulation; Computational intelligence; Computational modeling; MOSFET circuits; Mathematical model; Physics; Quantum mechanics; Voltage; Adaptive Neuro-Fuzzy Inference System; Artificial Neural Network; DG MOSFET;
Conference_Titel :
Semiconductor Electronics, 2008. ICSE 2008. IEEE International Conference on
Conference_Location :
Johor Bahru
Print_ISBN :
978-1-4244-3873-0
Electronic_ISBN :
978-1-4244-2561-7
DOI :
10.1109/SMELEC.2008.4770294
