The computational intelligence in simulation of DG MOSFET: Application to the simulation of the nanoscale CMOS circuit

Author

Hayati, Mohsen ; Seifi, Majid ; Rezaei, Abbas

fYear

2008

fDate

25-27 Nov. 2008

Firstpage

138

Lastpage

142

Abstract

In this paper, the simulation of DG MOSFET based on ANFIS and ANN models are carried out and their results are compared. These models can reduce the computational time while keeping the accuracy of physics-based models, like non-equilibrium Greenpsilas function (NEGF) formalism. The compact models with computational intelligent allow for fast and accurate system level simulation of the nanoscale circuits.

Keywords

CMOS integrated circuits; Green´s function methods; MOSFET; circuit simulation; nanoelectronics; semiconductor device models; ANFIS; ANN models; DG MOSFET; circuit simulation; computational intelligence; nanoscale CMOS circuit; nanoscale circuits; non-equilibrium Greenpsilas function formalism; semiconductor device model; system level simulation; Adaptive systems; Artificial neural networks; Circuit simulation; Computational intelligence; Computational modeling; MOSFET circuits; Mathematical model; Physics; Quantum mechanics; Voltage; Adaptive Neuro-Fuzzy Inference System; Artificial Neural Network; DG MOSFET;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Electronics, 2008. ICSE 2008. IEEE International Conference on

Conference_Location

Johor Bahru

Print_ISBN

978-1-4244-3873-0

Electronic_ISBN

978-1-4244-2561-7

Type

conf

DOI

10.1109/SMELEC.2008.4770294

Filename

4770294