• DocumentCode
    2553593
  • Title

    Dimension optimization of a MEMS LC pressure sensor

  • Author

    Nabipoor, Mohsen ; Majlis, Burhanuddin Yeop

  • Author_Institution
    Multimedia Univ., Cyberjaya
  • fYear
    2008
  • fDate
    25-27 Nov. 2008
  • Firstpage
    148
  • Lastpage
    152
  • Abstract
    In this work, an analytical method is introduced to optimize the structure of a MEMS LC pressure sensor based on the device pressure range, the maximum overload pressure, and other design constraints. The method can be applied to square and circular membrane sensors. The sensitivity of the LC structure is directly proportional to the sensitivity of its capacitor. To obtain the maximum sensitivity for a MEMS capacitor, the maximum displacement of the membrane under the maximum allowed pressure is used to determine the gap size between two electrodes. The ultimate stress of the membrane under the maximum overload pressure would define the length over thickness ratio of the membrane. To optimize he size of the LC structure, the total sensor area must be minimized. For a given resonant frequency, there would be a tradeoff between the size of the inductor and the capacitor. As a case study, the optimization method is employed to optimize the structure of a pressure sensor with a pressure range of 0-100 psi and an overload pressure of 200 psi. The obtained optimum size for a square sensor is 2.2 mm and for a circular sensor is 2.5 mm.
  • Keywords
    capacitors; microsensors; pressure sensors; LC structure; MEMS LC pressure sensor; MEMS capacitor; circular membrane sensors; design constraints; device pressure range; dimension optimization; inductor; maximum overload pressure; pressure 0 psi to 100 psi; pressure 200 psi; resonant frequency; size 2.2 mm; size 2.5 mm; square membrane sensors; thickness ratio; Biomembranes; Capacitors; Constraint optimization; Design optimization; Electrodes; Inductors; Micromechanical devices; Optimization methods; Resonant frequency; Stress;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Electronics, 2008. ICSE 2008. IEEE International Conference on
  • Conference_Location
    Johor Bahru
  • Print_ISBN
    978-1-4244-3873-0
  • Electronic_ISBN
    978-1-4244-2561-7
  • Type

    conf

  • DOI
    10.1109/SMELEC.2008.4770296
  • Filename
    4770296