DocumentCode :
2553629
Title :
Design and simulation of a high temperature MEMS micro-hotplate for application in trace gas detection
Author :
Ahmed, Abdelaziz Yousif ; Dennis, John Ojur ; Saad, Mohamad Naufal Mohamad ; Talah, Waddah Abdelbagi
Author_Institution :
Electr.&Electron. Dept., Univ. Teknol. Petronas, Tronoh
fYear :
2008
fDate :
25-27 Nov. 2008
Firstpage :
153
Lastpage :
157
Abstract :
In this paper, we present the simulation results of a high temperature MEMS micro-hotplate. The electro-thermo-mechanical behaviors of micro- hotplates (MHP) have been simulated using CoventorWare. In the simulation, the effects of various thicknesses of the silicon nitride (Si3N4) membrane layer on the temperature, mechanical deflection and power consumption of the MHP are evaluated. The effect of the addition of a layer of silicon carbide (SiC) on the MHP temperature distribution is also investigated. Results show that as the thickness of the Si3N4 membrane is increased from 0.3 mum to 3 mum, the power consumption of the MHP increases from 7.1 mW to 34.3 mW while the displacement of the membrane remains constant at a value of about 5.8 mum. It is also demonstrated that when the MHP is designed with a silicon carbide (SiC) heat distributing layer above the silicon oxide (SiO2) insulating layer on top of the heater, the uniformity of the temperature on the MHP membrane is considerably improved as compared to a membrane without SiC.
Keywords :
membranes; micromechanical devices; silicon compounds; CoventorWare; MEMS; Si3N4-SiC-SiO2; electro-thermo-mechanical behaviors; mechanical deflection; microhotplate; power 7.1 mW to 34.3 mW; power consumption; silicon carbide heat distributing layer; silicon nitride membrane layer; silicon oxide insulating layer; size 0.3 mum to 3 mum; Arm; Biomembranes; Dielectric materials; Energy consumption; Insulation; Mechanical systems; Micromechanical devices; Silicon carbide; Temperature distribution; Temperature sensors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Electronics, 2008. ICSE 2008. IEEE International Conference on
Conference_Location :
Johor Bahru
Print_ISBN :
978-1-4244-3873-0
Electronic_ISBN :
978-1-4244-2561-7
Type :
conf
DOI :
10.1109/SMELEC.2008.4770297
Filename :
4770297
Link To Document :
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