• DocumentCode
    2553646
  • Title

    Physical, chemical, and structural modifications to thin-film CuInSe2-based photovoltaic devices

  • Author

    Tuttle, John R. ; Contreras, Miguel ; Albin, David S. ; Noufi, Rommel

  • Author_Institution
    Nat. Renewable Energy Lab., Golden, CO, USA
  • fYear
    1991
  • fDate
    7-11 Oct 1991
  • Firstpage
    1062
  • Abstract
    Two approaches to the modification and improvement of CuInSe2 -based photovoltaic devices are investigated. The incorporation of wide gap CuInSe2-based alloys at the interface is discussed. The results are inconclusive, but suggest that the choice of alloy systems is critical. The growth of enhanced-grain thin-film CuInSe2 is accomplished in two manners. The properties of the films are consistent with that required for device fabrication
  • Keywords
    copper compounds; grain size; indium compounds; semiconductor thin films; solar cells; ternary semiconductors; chemical modifications; enhanced-grain; interface; photovoltaic devices; physical modifications; solar cells; structural modifications; thin film CuInSe2; wide gap CuInSe2-based alloys; Atherosclerosis; Chemicals; Circuits; Crystalline materials; Fabrication; Photovoltaic systems; Radiative recombination; Solar power generation; Thin film devices; Transistors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Photovoltaic Specialists Conference, 1991., Conference Record of the Twenty Second IEEE
  • Conference_Location
    Las Vegas, NV
  • Print_ISBN
    0-87942-636-5
  • Type

    conf

  • DOI
    10.1109/PVSC.1991.169374
  • Filename
    169374
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2553646