3D integrated sensors in silicon-on-sapphire CMOS

Author

Culurciello, Eugenio ; Andreou, Andreas G.

Author_Institution

Yale Univ., New Haven, CT

fYear

2006

fDate

21-24 May 2006

Abstract

We fabricated a 3D-integrated multi-chip sensor and actuator and demonstrated the ability of communication with a floating die and no galvanic connection. The prototype was fabricated on a conventional 0.5mum silicon-on-sapphire (SOS) process. We designed a heater and a temperature sensor module with digital output based on a bandgap voltage reference. We used capacitive coupling to provide both intra-die communication of the digital temperature readings and also energy-harvesting by means of a charge pump. The non-galvanically interconnected prototype is an enabling technology for three-dimensional VLSI fabrication, 3D CMOS, wafer stacking and packaging

Keywords

CMOS integrated circuits; VLSI; reference circuits; sapphire; silicon-on-insulator; temperature sensors; 0.5 micron; 3D CMOS; 3D integrated sensors; bandgap voltage reference; capacitive coupling; charge pump; digital temperature reading; energy-harvesting; floating die; heater sensor; multi-chip actuator; multi-chip sensor; nongalvanic interconnection; silicon-on-sapphire; temperature sensor; three-dimensional VLSI fabrication; wafer packaging; wafer stacking; Actuators; CMOS technology; Charge pumps; Galvanizing; Photonic band gap; Process design; Prototypes; Temperature sensors; Very large scale integration; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Circuits and Systems, 2006. ISCAS 2006. Proceedings. 2006 IEEE International Symposium on

Conference_Location

Island of Kos

Print_ISBN

0-7803-9389-9

Type

conf

DOI

10.1109/ISCAS.2006.1693744

Filename

1693744