Microelectromechanical systems in 3D SOI-CMOS: sensing electronics embedded in mechanical structures

Author

Tejada, Francisco ; Andreou, Andreas G.

Author_Institution

Electr. & Comput. Eng., Johns Hopkins Univ., Baltimore, MD

fYear

2006

fDate

21-24 May 2006

Lastpage

4970

Abstract

We discuss the design of CMOS MEMS in a 3D SOI-CMOS technology. We present layout architectures, preliminary mechanics modeling using finite element analysis and release process flows. An accelerometer structure is used as the model system with electronics embedded into a suspended proof mass. A prototype chip is fabricated in the MIT Lincoln Laboratories that includes test structures and systems for both a capacitive sensed and interferometric sensed accelerometers

Keywords

CMOS integrated circuits; accelerometers; capacitive sensors; finite element analysis; interferometry; microsensors; silicon-on-insulator; 3D SOI-CMOS; CMOS MEMS; accelerometer structure; capacitive sensed accelerometers; finite element analysis; interferometric sensed accelerometers; layout architectures; mechanical structures; microelectromechanical systems; preliminary mechanics modeling; process flows; sensing electronics; Accelerometers; CMOS process; CMOS technology; Etching; Fabrication; Microelectromechanical systems; Micromechanical devices; Semiconductor device modeling; Silicon; Wafer bonding;

fLanguage

English

Publisher

ieee

Conference_Titel

Circuits and Systems, 2006. ISCAS 2006. Proceedings. 2006 IEEE International Symposium on

Conference_Location

Island of Kos

Print_ISBN

0-7803-9389-9

Type

conf

DOI

10.1109/ISCAS.2006.1693746

Filename

1693746