Squeeze film air damping analysis of MEMS piezoresistive accelerometer

Author

Mukhiya, R. ; Bhatta, T.K.

Author_Institution

Electron. & ECE Dept., Indian Inst. of Technol., Kharagpur

fYear

2008

fDate

25-27 Nov. 2008

Firstpage

198

Lastpage

202

Abstract

In this paper, squeeze film damping analysis of silicon piezoresistive accelerometer is reported. The accelerometer is a bulk micromachined device fabricated using CMOS compatible dual-dope TMAH. The device is realized in a three layer glass/silicon/glass bonded structure, with cavities of uniform depth (~30 mum) on both glasses to provide space for the damping medium. Air is used as damping medium, which has less temperature effect on the viscosity and has low density than those of oil. Simplified electrical equivalent model for the squeeze film air damping of the device has been derived. Experimental results of the accelerometer for the dynamic response also have been presented. It is observed that for the air damping there is not much variation in the resonance frequency and device is critically damped.

Keywords

accelerometers; damping; dynamic response; elemental semiconductors; equivalent circuits; microsensors; piezoresistive devices; silicon; MEMS; Si; dynamic response; electrical equivalent model; micromachining; piezoresistive accelerometer; resonance frequency; squeeze film air damping analysis; Accelerometers; Bonding; Damping; Glass; Micromechanical devices; Piezoresistance; Semiconductor films; Silicon; Temperature; Viscosity; Accelerometer; MEMS; Squeeze Film Damping;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Electronics, 2008. ICSE 2008. IEEE International Conference on

Conference_Location

Johor Bahru

Print_ISBN

978-1-4244-3873-0

Electronic_ISBN

978-1-4244-2561-7

Type

conf

DOI

10.1109/SMELEC.2008.4770307

Filename

4770307