DocumentCode :
2553903
Title :
A study of ITO/CdS/CuInGaSe2 thin film solar cells
Author :
Ramanathan, K. ; Dhere, R.G. ; Coutts, T.J.
Author_Institution :
Nat. Renewable Energy Lab., Golden, CO, USA
fYear :
1991
fDate :
7-11 Oct 1991
Firstpage :
1068
Abstract :
Solar cells were fabricated on evaporated CuInGaSe2 thin films by depositing thin CdS layers from aqueous solutions and subsequently depositing indium tin oxide (ITO) by DC sputtering. The CdS thickness was varied, and its effect on device quality was studied. The blue response of the cells showed improvement when a thin CdS layer was used, but the cell performance was affected by shunt leakage. Using a thick, solution-grown CdS layer, devices with 8.3% efficiency were fabricated
Keywords :
II-VI semiconductors; cadmium compounds; copper compounds; gallium compounds; indium compounds; semiconductor materials; semiconductor thin films; solar cells; sputtered coatings; ternary semiconductors; tin compounds; 8.3 percent; DC sputtering; ITO-CdS-CuInGaSe2; InSnO-CdS-CuInGaSe2; blue response; evaporated thin films; shunt leakage; solution-grown CdS layer; thin film solar cells; Conductive films; Conductors; Indium tin oxide; Optical films; Photovoltaic cells; Refractive index; Sputtering; Substrates; Transistors; Zinc oxide;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Photovoltaic Specialists Conference, 1991., Conference Record of the Twenty Second IEEE
Conference_Location :
Las Vegas, NV
Print_ISBN :
0-87942-636-5
Type :
conf
DOI :
10.1109/PVSC.1991.169375
Filename :
169375
Link To Document :
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