• DocumentCode
    2553903
  • Title

    A study of ITO/CdS/CuInGaSe2 thin film solar cells

  • Author

    Ramanathan, K. ; Dhere, R.G. ; Coutts, T.J.

  • Author_Institution
    Nat. Renewable Energy Lab., Golden, CO, USA
  • fYear
    1991
  • fDate
    7-11 Oct 1991
  • Firstpage
    1068
  • Abstract
    Solar cells were fabricated on evaporated CuInGaSe2 thin films by depositing thin CdS layers from aqueous solutions and subsequently depositing indium tin oxide (ITO) by DC sputtering. The CdS thickness was varied, and its effect on device quality was studied. The blue response of the cells showed improvement when a thin CdS layer was used, but the cell performance was affected by shunt leakage. Using a thick, solution-grown CdS layer, devices with 8.3% efficiency were fabricated
  • Keywords
    II-VI semiconductors; cadmium compounds; copper compounds; gallium compounds; indium compounds; semiconductor materials; semiconductor thin films; solar cells; sputtered coatings; ternary semiconductors; tin compounds; 8.3 percent; DC sputtering; ITO-CdS-CuInGaSe2; InSnO-CdS-CuInGaSe2; blue response; evaporated thin films; shunt leakage; solution-grown CdS layer; thin film solar cells; Conductive films; Conductors; Indium tin oxide; Optical films; Photovoltaic cells; Refractive index; Sputtering; Substrates; Transistors; Zinc oxide;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Photovoltaic Specialists Conference, 1991., Conference Record of the Twenty Second IEEE
  • Conference_Location
    Las Vegas, NV
  • Print_ISBN
    0-87942-636-5
  • Type

    conf

  • DOI
    10.1109/PVSC.1991.169375
  • Filename
    169375
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2553903