Design and optimization of distributed Bragg reflector for 1310nm vertical cavity surface emitting lasers

Author

Abdul Manaf, Nor Azlian ; Alias, Mohd Sharizal ; Mithani, Sufian Mousa ; Maulud, Mohd Fauzi ; Yahya, Mohamed Razman ; Mat, Abdul Fatah Awang

Author_Institution

TM R & D Sdn Bhd, TMR & D Innovation Center, Cyberjaya

fYear

2008

fDate

25-27 Nov. 2008

Firstpage

254

Lastpage

258

Abstract

Optimization of GaAs/Al(x)Ga(1-x)As DBR mirror is performed for 1310 nm VCSEL application. The Al compositions and DBR periods are varied. GaAs/AlAs composition and DBR with 35 period shows the highest reflectivity which is 99.976% and 99.963%. The maximum reflectivity of full VCSEL structure is 99.957% with existence of resonant cavity of 0.141% depth at 1301.9 nm wavelength.

Keywords

III-V semiconductors; aluminium compounds; distributed Bragg reflector lasers; gallium arsenide; laser cavity resonators; laser mirrors; reflectivity; surface emitting lasers; DBR mirror; GaAs-AlGaAs; VCSEL; distributed Bragg reflector; reflectivity; resonant cavity; vertical cavity surface emitting lasers; wavelength 1301.9 nm; Design optimization; Distributed Bragg reflectors; Gallium arsenide; Laser cavity resonators; Mirrors; Optical design; Reflectivity; Refractive index; Surface emitting lasers; Vertical cavity surface emitting lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Electronics, 2008. ICSE 2008. IEEE International Conference on

Conference_Location

Johor Bahru

Print_ISBN

978-1-4244-3873-0

Electronic_ISBN

978-1-4244-2561-7

Type

conf

DOI

10.1109/SMELEC.2008.4770318

Filename

4770318