Raman channel temperature measurement of SiC MESFET as a function of ambient temperature and DC power

Author

Ponchak, George E. ; Eldridge, Jeffrey I. ; Krainsky, Isay L.

Author_Institution

Glenn Res. Center, NASA, Cleveland, OH, USA

fYear

2009

fDate

7-12 June 2009

Firstpage

885

Lastpage

888

Abstract

Raman spectroscopy is used to measure the junction temperature of a Cree SiC MESFET as a function of the ambient temperature and DC power. The carrier temperature, which is approximately equal to the ambient temperature, is varied from 25degC to 450degC, and the transistor is biased with V_DS=10 V and I_DS of 50 mA and 100 mA. It is shown that the junction temperature is approximately 52 and 100degC higher than the ambient temperature for the DC power of 500 and 1000 mW, respectively.

Keywords

Raman spectroscopy; Schottky gate field effect transistors; semiconductor device measurement; silicon compounds; temperature measurement; wide band gap semiconductors; Cree MESFET; DC power; Raman channel temperature measurement; SiC; ambient temperature; current 100 mA; current 50 mA; junction temperature; power 1000 mW; power 500 mW; temperature 25 C to 450 C; voltage 10 V; MESFETs; Microscopy; Oscillators; Raman scattering; Sensor systems; Silicon carbide; Spectroscopy; Temperature measurement; Temperature sensors; Wireless sensor networks; Junction Temperature; MESFET; Raman Spectroscopy; SiC;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 2009. MTT '09. IEEE MTT-S International

Conference_Location

Boston, MA

ISSN

0149-645X

Print_ISBN

978-1-4244-2803-8

Electronic_ISBN

0149-645X

Type

conf

DOI

10.1109/MWSYM.2009.5165839

Filename

5165839