Title :
The dependence of GaN HEMT´s frequency figure of merit on temperature
Author :
Darwish, Ali M. ; Huebschman, Benjamin ; Viveiros, Edward ; Hung, H. Alfred
Author_Institution :
Army Res. Lab., Adelphi, MD, USA
Abstract :
This study presents extensive thermal characterization of GaN/SiC devices from five US sources across temperature (-25degC to +125degC). The changes with temperature for: cutoff frequency (ft), maximum oscillation frequency (fmax), saturated current (Idss), transconductance (gm) are measured, statistics studied, and correlations investigated. Temperature-coefficients are established for ft, fmax, Idss, and gm in GaN technology. The results obtained provide MMIC designers with key information required for meeting temperature specifications.
Keywords :
III-V semiconductors; MMIC; gallium compounds; high electron mobility transistors; integrated circuit design; semiconductor device measurement; silicon compounds; wide band gap semiconductors; GaN-SiC; HEMT frequency figure-of-merit; MMIC design; cutoff frequency; maximum oscillation frequency; saturated current; temperature -25 C to 125 C; temperature coefficients; thermal characterization; transconductance; Current measurement; Cutoff frequency; Decision support systems; Frequency measurement; Gallium nitride; HEMTs; Silicon carbide; Temperature dependence; Temperature distribution; Transconductance; Gallium nitride; MMIC; cutoff frequency; maximum oscillation frequency; saturated current; temperature coefficient; transconductance;
Conference_Titel :
Microwave Symposium Digest, 2009. MTT '09. IEEE MTT-S International
Conference_Location :
Boston, MA
Print_ISBN :
978-1-4244-2803-8
Electronic_ISBN :
0149-645X
DOI :
10.1109/MWSYM.2009.5165845
