Design optimization of GaInNAs quantum wells for long wavelength VCSEL

Author

Alias, Mohd Sharizal ; Maulud, Mohd Fauzi ; Mitani, Sufian ; Shaari, Sahbuddin ; Manaf, Nor Azlian Abd

Author_Institution

Telekom Malaysia Res.&Dev., TMR&D Innovation Centre, Cyberjaya

fYear

2008

fDate

25-27 Nov. 2008

Firstpage

311

Lastpage

315

Abstract

Analysis of material composition effect and material gain are performed to investigate GaInNAs quantum wells performance for application in long wavelength Vertical-Cavity Surface-Emitting Laser (VCSEL) operating at 1310 nm wavelength. The optimized GaInNAs active region is then incorporated into double intracavity device structure for VCSEL analysis. The long wavelength GaInNAs VCSEL exhibits sub-miliampere operating current and single-mode emission at 1310 nm wavelength.

Keywords

III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; quantum well lasers; surface emitting lasers; GaInNAs; VCSEL; design optimization; double intracavity device structure; material composition; material gain; quantum wells; vertical-cavity surface-emitting laser; wavelength 1310 nm; Composite materials; Design optimization; Distributed Bragg reflectors; Fiber lasers; Gallium arsenide; Nitrogen; Optical materials; Surface emitting lasers; Temperature; Vertical cavity surface emitting lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Electronics, 2008. ICSE 2008. IEEE International Conference on

Conference_Location

Johor Bahru

Print_ISBN

978-1-4244-3873-0

Electronic_ISBN

978-1-4244-2561-7

Type

conf

DOI

10.1109/SMELEC.2008.4770330

Filename

4770330