High efficiency Class-E tuned Doherty amplifier using GaN HEMT

Author

Choi, Gil Wong ; Kim, Hyoung Jong ; Hwang, Woong Jae ; Shin, Suk Woo ; Choi, Jin Joo ; Ha, Sung Jae

Author_Institution

Kwangwoon Univ., Seoul, South Korea

fYear

2009

fDate

7-12 June 2009

Firstpage

925

Lastpage

928

Abstract

This paper describes the design and fabrication of a highly efficient switching-mode class-E Doherty power amplifier using gallium nitride (GaN) high-electron mobility transistor (HEMT) for S-band radar applications. Measured results of the Doherty amplifier show power-added efficiency (PAE) and drain efficiency of 62.6% and 73.1% at 37 dBm of 6 dB output back-off point from saturated output power at 2.85 GHz, compared with PAE and drain efficiency of 42.9% and 44.7% for the case of balanced amplifier. It was found that PAE was improved by 19.7% by adopting the Doherty efficiency enhancement technique.

Keywords

III-V semiconductors; gallium compounds; high electron mobility transistors; power amplifiers; radar; Doherty efficiency enhancement technique; GaN; S-band radar applications; gallium nitride high-electron mobility transistor; power-added efficiency; switching-mode class-E Doherty power amplifier; Fabrication; Gallium nitride; HEMTs; High power amplifiers; III-V semiconductor materials; MODFETs; Power amplifiers; Power generation; Power measurement; Radar applications; Doherty amplifier; GaN HEMT; efficiency; switching-mode Class-E amplifier;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 2009. MTT '09. IEEE MTT-S International

Conference_Location

Boston, MA

ISSN

0149-645X

Print_ISBN

978-1-4244-2803-8

Electronic_ISBN

0149-645X

Type

conf

DOI

10.1109/MWSYM.2009.5165849

Filename

5165849