Enhanced terahertz detection using multiple GaAs HEMTs connected in series

Author

Elkhatib, Tamer A. ; Veksler, Dmitry B. ; Salama, Khaled N. ; Zhang, Xi-C ; Shur, Michael S.

Author_Institution

Center for Terahertz Res., Rensselaer Polytech. Inst., Troy, NY, USA

fYear

2009

fDate

7-12 June 2009

Firstpage

937

Lastpage

940

Abstract

We report here, for the first time, on enhanced nonresonant detection of terahertz radiation using multiple InGaAs/GaAs high-electron-mobility transistors (HEMTs) connected in series and biased by a direct drain current. A 1.63 THz (184 mum) response is proportional to the number of detecting transistors operating in saturation region at the same gate-source bias voltage. The experimental data are in agreement with the detection mechanism based on the rectification of overdamped plasma waves excited by radiation in channels of devices.

Keywords

III-V semiconductors; arsenic compounds; gallium compounds; high electron mobility transistors; terahertz waves; InGaAs-GaAs; direct drain current; frequency 1.63 THz; gate-source bias voltage; high-electron-mobility transistor; multiple GaAs HEMT; terahertz radiation detection; Gallium arsenide; Gas lasers; HEMTs; Indium gallium arsenide; MODFETs; Optical imaging; Plasma waves; Radiation detectors; Submillimeter wave technology; Testing; GaAs HEMTs; plasma waves; room temperature; series transistors; short channel; terahertz detection;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 2009. MTT '09. IEEE MTT-S International

Conference_Location

Boston, MA

ISSN

0149-645X

Print_ISBN

978-1-4244-2803-8

Electronic_ISBN

0149-645X

Type

conf

DOI

10.1109/MWSYM.2009.5165852

Filename

5165852