• DocumentCode
    2554529
  • Title

    Properties of CuInSe2 films for solar cell applications

  • Author

    Urabe, Keiichiro ; Hama, T. ; Roy, Matthieu ; Fujisawa, Hiroyuki ; Ohsawa, M. ; Ichikawa, Y. ; Sakai, Hiroki

  • Author_Institution
    Fuji Electric Corp. Res. & Dev. Ltd., Kanagawa
  • fYear
    1991
  • fDate
    7-11 Oct 1991
  • Firstpage
    1082
  • Abstract
    A study was made of properties of CuInSe2, CuInGaSe2 and CdZnS films and the performance of solar cells fabricated with these films. An efficiency of 10.5% for the cell with CuInSe2 film prepared by coevaporation and Cd1-xZn x S (x=0.19) film by EB evaporation was obtained. For the CuInGaSe2-based cell, an efficiency of 10.0% was obtained. PL emission spectra obtained on CuInSe2 films resulting in high-efficiency devices has two peaks in the range of 0.85-0.93 eV. For the low-efficiency CuInSe2 films, a single peak is observed at a higher photon energy
  • Keywords
    cadmium compounds; copper compounds; gallium compounds; indium compounds; semiconductor device testing; semiconductor thin films; solar cells; ternary semiconductors; zinc compounds; 0.85 to 0.93 eV; 10 percent; 10.5 percent; CdZnS; CuInGaSe2; CuInSe2; EB evaporation; PL emission spectra; coevaporation; photon energy; semiconductor device testing; solar cell; Conductivity; Copper; Gallium; Indium; Monitoring; P-n junctions; Photovoltaic cells; Plasma measurements; Solar heating; X-ray diffraction;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Photovoltaic Specialists Conference, 1991., Conference Record of the Twenty Second IEEE
  • Conference_Location
    Las Vegas, NV
  • Print_ISBN
    0-87942-636-5
  • Type

    conf

  • DOI
    10.1109/PVSC.1991.169378
  • Filename
    169378
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2554529