Title :
Comparison of the power cycling stress of IGBT in DFIG and full size converter for windenergy applications
Author :
Weiss, Daniel ; Eckel, Hans-Gunter
Author_Institution :
Univ. of Rostock, Rostock, Germany
Abstract :
In this paper the power cycling stress of the power semiconductors in wind energy applications for two common generator concepts (DFIG and gearless synchronous machine) will be investigated. The aim is to show how the chosen generator concept influences the power cycling stress of the power semiconductors. For the investigation regarding power cycling stress and estimated lifetime a wind speed profile of one month measured at the FINO 1 station in the German North Sea was used. With this it is possible to consider the power cycling stress caused by the output frequency of the generator as well as the power cycling stress caused by the cycles due to wind speed variations.
Keywords :
asynchronous generators; power semiconductor devices; synchronous machines; wind power; DFIG; FINO 1 station; German North Sea; gearless synchronous machine; generator concept; power cycling stress; power semiconductors; wind energy applications; wind speed profile; wind speed variations; Abstracts; Facsimile; Insulated gate bipolar transistors; Junctions; Diode; IGBT; Power cycling; Thermal stress; Wind energy;
Conference_Titel :
Power Electronics and Applications (EPE'14-ECCE Europe), 2014 16th European Conference on
Conference_Location :
Lappeenranta
DOI :
10.1109/EPE.2014.6910755
