GMRAM: giant magneto-resistance random-access memory

Giant Magneto-resistance Random-Access Memory (GMRAM) is a nonvolatile random access memory that uses magnetic multi-layers made of thin layers of common ferromagnetic materials to write digital data and the giant magneto-resistance (GMR) effect to read stored data. The direction of magnetization in the storage layer of the magnetic multi-layer is used to store a bit of information. The GMR material is magneto-resistive and changes resistance when the magnetization of the layers is changed by a magnetic field. The GMR effect produces a signal that distinguishes between a “1” and “0.” GMRAM is a chip that integrates magnetic and semiconductor devices in an architecture. Attributes for GMRAM make it desirable as a nonvolatile memory