Dynamic models for predicting the thermal behavior of vertical MOSFET transistors under pulsed conditions

Author

Rice, D. ; Crowder, J. ; Battaglia, B.

Author_Institution

HVVi Semicond., Inc., Phoenix, AZ, USA

fYear

2009

fDate

7-12 June 2009

Firstpage

985

Lastpage

988

Abstract

This paper describes a method for calculating the thermal resistance of a vertical MOSFET power amplifier. The method for measuring the thermal resistance under a given set of input conditions is given. From this data a thermal transient model with the thermal resistance and capacitance parameters is created. This model can be utilized to determine the thermal resistance of any input signal condition. This model compares well to a physical based, finite element model that is used to investigate physical changes to the device structure.

Keywords

MOSFET; finite element analysis; power amplifiers; thermal resistance; MOSFET power amplifier; capacitance parameters; finite element model; signal condition; thermal behavior prediction; thermal resistance calculation; thermal transient model; vertical MOSFET transistors; Electrical resistance measurement; Heating; Immune system; MOSFET circuits; Packaging; Predictive models; Semiconductor diodes; Temperature measurement; Thermal resistance; Voltage; power amplifiers; power transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 2009. MTT '09. IEEE MTT-S International

Conference_Location

Boston, MA

ISSN

0149-645X

Print_ISBN

978-1-4244-2803-8

Electronic_ISBN

0149-645X

Type

conf

DOI

10.1109/MWSYM.2009.5165864

Filename

5165864