Title :
An enhanced physical and scalable lumped model of RF CMOS spiral inductors
Author :
Salimy, S. ; Toutain, S. ; Rhallabi, A. ; Goullet, A. ; Saubat, J.-C. ; Challali, F.
Author_Institution :
Inst. de Rech. en Electron. et Electrotech. de Nantes Atlantique, Nantes, France
Abstract :
An enhanced scalable compact model for on-chip RF spiral inductors is presented in this paper. By considering the layout and technology parameters under quasi-static approximation, the model elements are all expressed analytically and based on physics assumption. The proposed approach improves the accuracy of the previous physical based scalable model, and considers the frequency dependant behavior of spiral inductors such as the substrate coupling, the skin and proximity effect.
Keywords :
CMOS integrated circuits; inductors; radiofrequency integrated circuits; scaling circuits; frequency dependant behavior; on-chip RF CMOS spiral inductors; radio frequency integrated circuits; scalable lumped model; CMOS technology; Coupling circuits; Inductance; Inductors; Proximity effect; Radio frequency; Radiofrequency integrated circuits; Semiconductor device modeling; Silicon; Spirals; CMOS; Inductor Model; Physical Model; Spiral Inductor;
Conference_Titel :
Microwave Symposium Digest, 2009. MTT '09. IEEE MTT-S International
Conference_Location :
Boston, MA
Print_ISBN :
978-1-4244-2803-8
Electronic_ISBN :
0149-645X
DOI :
10.1109/MWSYM.2009.5165872
