• DocumentCode
    255499
  • Title

    BSIM-IMG with improved surface potential calculation recipe

  • Author

    Kushwaha, P. ; Yadav, C. ; Agarwal, H. ; Chauhan, Y.S. ; Srivatsava, J. ; Khandelwal, S. ; Duarte, J.P. ; Chenming Hu

  • Author_Institution
    Dept. of Electr. Eng., Indian Inst. of Technol., Kanpur, Kanpur, India
  • fYear
    2014
  • fDate
    11-13 Dec. 2014
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    In this paper, we have reported the improved surface potential calculation in the BSIM-IMG model for FDSOI MOSFETs. Model validation is done with the experimental data provided by Low-power Electronics Association and Project (LEAP). The model shows accurate behavior for C-V and I-V characteristics while keeping smooth behavior for their higher order derivatives. Model has smooth transition from weak inversion to strong inversion and satisfies DC and AC symmetry tests.
  • Keywords
    MOSFET; silicon-on-insulator; AC symmetry tests; BSIM-IMG model; C-V characteristics; DC symmetry tests; FDSOI MOSFET; I-V characteristics; LEAP; Low-power Electronics Association and Project; fully depleted silicon on insulator; improved surface potential calculation recipe; model validation; Data models; Large scale integration; Logic gates; MOSFET; Semiconductor device modeling; Silicon;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    India Conference (INDICON), 2014 Annual IEEE
  • Conference_Location
    Pune
  • Print_ISBN
    978-1-4799-5362-2
  • Type

    conf

  • DOI
    10.1109/INDICON.2014.7030498
  • Filename
    7030498
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=255499