Contamination analyses of Al bond pads using FIB/SEM/EDX

Author

Zhao, S.P. ; Hua, Y.N. ; Goh, G.P. ; Guo, Z.R. ; Chau, K.W.

Author_Institution

Failure Anal. & Reliability, Inst. of Microelectron., Singapore

fYear

1997

fDate

21-25 Jul 1997

Firstpage

254

Lastpage

259

Abstract

Aluminum bond pads on semiconductor chips play an important role in IC device reliability and yield. Contaminated Al bond pads can cause poor intermetallic growths, thus failed or unreliable connections from the chip to the outside world. Utilizing FIB, SEM and EDX techniques, the contamination analysis may be carried out to reveal and identify defects underneath Al layer. In this study, three cases of Al bond pads with underneath contamination were investigated using this analysis approach. Based on the FIB/SEM/EDX analysis results, contamination root causes are discussed and suggested

Keywords

X-ray chemical analysis; aluminium; focused ion beam technology; integrated circuit metallisation; ion beam applications; lead bonding; scanning electron microscopy; surface contamination; Al; EDX; FIB; IC device; SEM; aluminum bond pad; contamination analysis; defects; failure; intermetallic growth; reliability; semiconductor chip; yield; Artificial intelligence; Atherosclerosis; Failure analysis; Ion beams; Optical microscopy; Passivation; Scanning electron microscopy; Semiconductor device reliability; Surface contamination; Wafer bonding;

fLanguage

English

Publisher

ieee

Conference_Titel

Physical & Failure Analysis of Integrated Circuits, 1997., Proceedings of the 1997 6th International Symposium on

Print_ISBN

0-7803-3985-1

Type

conf

DOI

10.1109/IPFA.1997.638339

Filename

638339