Parallel fluid modeling of a dome-shape inductively coupled plasma reactor with fluorocarbon precusor

Summary form only given. A parallel 2D axisymmetric fluid model for simulating fluorocarbon (CF4) gas discharge in a dome-shaped inductively couple plasma source (ICPs) used for etching SiO2 under pressure of 20 mTorr is reported. Etching of SiO2 is an important fabrication process in semiconductor industry. Thus, etching rate and selectivity of SiO2 over Si are of extreme importance during etching. In our models, a set of fluid modeling equations coupled with Maxwell´s equation and surface model are solved self-consistently by using finite-difference method. At each time step, the resulting large sparse algebraic nonlinear system is solved by the combination of preconditioning and Krylov subspace method (KSP)¹. All equations are parallelized completely using domain decomposition method. A complex plasma chemistry is employed, which includes 32 species, 92 gas reactions and 27 surface reactions.