Comparison between OTCP and C-V extraction methods for radiation-induced traps in MOSFET devices

The OTCP extraction method is compared to C-V one for two radiation doses, 500 Krad and 1Mrad. It is shown that the radiation induced oxide-trap (DeltaN_ot) obtained by OTCP are in excellent agreement with DeltaN_ot extracted using C-V. However, for interface-trap density (DeltaN_it), most DeltaN_it values extracted by C-V method in MOS capacitors are 70% less than those measured using OTCP in P- and N-MOS transistors. This underestimation is probably due to the fact that C-V scans interface-trap less than C-P in forbidden band energy. In addition, the OTCP method can give the radiation induced border-trap (DeltaN_bt). Hence, we have confirmed that OTCP is more precise, direct and reliable method than C-V to predict radiation-induced interface-, oxide-, and border-trap in MOS transistors in order to evaluate their impact on devices intended for space and medical applications.