Title :
Analysis of short-circuit conditions for silicon carbide power transistors and suggestions for protection
Author :
Sadik, Diane-Perle ; Colmenares, Juan ; Peftitsis, Dimosthenis ; Tolstoy, Georg ; Rabkowski, Jacek ; Nee, H.-P.
Author_Institution :
Dept. of Electr. Energy Conversion, KTH R. Inst. of Technol., Stockholm, Sweden
Abstract :
An experimental analysis of the behavior under short-circuit conditions of three different Silicon Carbide (SiC) 1200 V power devices is presented. It is found that all devices take up a substantial voltage, which is favorable for detection of short-circuits. A suitable method for short-circuit detection without any comparator is demonstrated. A SiC JFET driver with an integrated short-circuit protection (SCP) is presented where a short-circuit detection is added to a conventional driver design in a simple way. Experimental tests of the SCP driver operating under short-circuit condition and under normal operation are performed successfully.
Keywords :
driver circuits; junction gate field effect transistors; power field effect transistors; short-circuit currents; silicon compounds; wide band gap semiconductors; SCP driver; SiC; SiC JFET driver; integrated short-circuit protection; short-circuit conditions; short-circuits detection; silicon carbide power transistors; voltage 1200 V; Circuit faults; Inductance; JFETs; Logic gates; MOSFET; Silicon carbide; Voltage measurement; BJT; Fault handling strategy; Faults; JFET; MOSFET; Power semiconductor device; Protection device; Robustness; Safety; Silicon Carbide (SiC); Wide bandgap devices;
Conference_Titel :
Power Electronics and Applications (EPE'14-ECCE Europe), 2014 16th European Conference on
Conference_Location :
Lappeenranta
DOI :
10.1109/EPE.2014.6910789
