Title :
The impact of Silicon-Cap on electrical characteristics of Schottky Barrier p-MOSFET with strained channel
Author :
Fatemeh, Kohani ; Morteza, Fathipour
Author_Institution :
Sch. of Electr. & Comput. Eng., Univ. of Tehran, Tehran
Abstract :
In order to improve the electrical characteristics of Schottky barrier p-MOSFETs with strained channel, we have proposed to reduce silicon-cap thickness in this paper. We demonstrate in the proposed hetero SBMOS, by decreasing the silicon-cap from 10 nm to 4 nm, the Ion/Ioff ratio and transconductance can be improved up to 98% and 20% respectively.
Keywords :
MOSFET; Schottky barriers; Schottky barrier p-MOSFET; silicon-cap; strained channel; transconductance; Computational modeling; Doping; Electric variables; Germanium silicon alloys; MOSFET circuits; Schottky barriers; Semiconductor process modeling; Silicon germanium; Transconductance; Tunneling;
Conference_Titel :
Semiconductor Electronics, 2008. ICSE 2008. IEEE International Conference on
Conference_Location :
Johor Bahru
Print_ISBN :
978-1-4244-3873-0
Electronic_ISBN :
978-1-4244-2561-7
DOI :
10.1109/SMELEC.2008.4770373
