Title :
Deep level transient spectroscopy on CuInSe2 junctions
Author :
Shih, I. ; Li, A.L.
Author_Institution :
Dept. of Electr. Eng., McGill Univ., Montreal, Que., Canada
Abstract :
In order to investigate defects in monocrystalline CuInSe2 solar cells DLTS (deep level transient spectroscopy) measurements were performed on both In- or Bi-diffused homojunctions and Al-CuInSe 2 Schottky junctions made on this material. Two hole trap levels, one at 250±15 meV and the other at 520±15 meV from the valence band edge, were found on either homojunction or Schottky junctions. The trap densities in the homojunctions were on the order of 1013 cm-3, but the value was found to be one order magnitude larger in the Schottky junctions fabricated on the same substrate. During the DLTS measurements, another hole trap level with an energy of 186±3 meV from the valence band edge was found in two other Schottky junctions. The stoichiometry of the samples used to fabricate these devices was believed to be responsible for the difference
Keywords :
Schottky effect; copper compounds; deep level transient spectroscopy; hole traps; indium compounds; p-n homojunctions; semiconductor device testing; solar cells; ternary semiconductors; CuInSe2; DLTS; Schottky junctions; deep level transient spectroscopy; hole trap levels; homojunctions; semiconductor device testing; stoichiometry; substrate; trap densities; valence band; Bismuth; Energy measurement; Etching; Fabrication; Ohmic contacts; Performance evaluation; Spectroscopy; Substrates; Surface treatment; Temperature;
Conference_Titel :
Photovoltaic Specialists Conference, 1991., Conference Record of the Twenty Second IEEE
Conference_Location :
Las Vegas, NV
Print_ISBN :
0-87942-636-5
DOI :
10.1109/PVSC.1991.169381
