Integrated on-chip Ba2Ti9O20 dielectric resonator oscillator in GaAs technology

Author

Freundorfer, A.P. ; Bijumon, P.V. ; Sayer, M.

Author_Institution

Dept. of Electr. & Comput. Eng., Queen´´s Univ., Kingston, ON, Canada

fYear

2009

fDate

7-12 June 2009

Firstpage

1105

Lastpage

1108

Abstract

We report for the first time a 26 GHz K/Ka-band dielectric resonator oscillator (DRO) in 0.8 mum GaAs MESFET that had the Ba₂Ti₉O₂₀ dielectric resonator (DR) grown to the surface of the chip at a temperature of 150degC without destroying the devices of the IC. It was compared to a DRO that had a commercially available DR, Ba(Zn_1/3Ta_2/3)O₃, epoxied to it. The Ba₂Ti₉O₂₀ DRO had a measured output power power of 5.68 dBm at 25.6 GHz and a phase noise of -114 dBc @ 1 MHz.

Keywords

MESFET circuits; barium compounds; dielectric resonators; gallium arsenide; oscillators; Ba(Zn_0.33Ta_0.66)O₃; Ba₂Ti₉O₂₀; GaAs technology; MESFET; dielectric resonator oscillator; frequency 26 GHz; integrated on-chip; Dielectric devices; Gallium arsenide; MESFET integrated circuits; Noise measurement; Oscillators; Phase measurement; Phase noise; Power generation; Power measurement; Temperature; Ceramics; Dielectric films; Dielectric materials; Dielectric resonator oscillators;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 2009. MTT '09. IEEE MTT-S International

Conference_Location

Boston, MA

ISSN

0149-645X

Print_ISBN

978-1-4244-2803-8

Electronic_ISBN

0149-645X

Type

conf

DOI

10.1109/MWSYM.2009.5165894

Filename

5165894