DocumentCode :
2555404
Title :
Integrated on-chip Ba2Ti9O20 dielectric resonator oscillator in GaAs technology
Author :
Freundorfer, A.P. ; Bijumon, P.V. ; Sayer, M.
Author_Institution :
Dept. of Electr. & Comput. Eng., Queen´´s Univ., Kingston, ON, Canada
fYear :
2009
fDate :
7-12 June 2009
Firstpage :
1105
Lastpage :
1108
Abstract :
We report for the first time a 26 GHz K/Ka-band dielectric resonator oscillator (DRO) in 0.8 mum GaAs MESFET that had the Ba2Ti9O20 dielectric resonator (DR) grown to the surface of the chip at a temperature of 150degC without destroying the devices of the IC. It was compared to a DRO that had a commercially available DR, Ba(Zn1/3Ta2/3)O3, epoxied to it. The Ba2Ti9O20 DRO had a measured output power power of 5.68 dBm at 25.6 GHz and a phase noise of -114 dBc @ 1 MHz.
Keywords :
MESFET circuits; barium compounds; dielectric resonators; gallium arsenide; oscillators; Ba(Zn0.33Ta0.66)O3; Ba2Ti9O20; GaAs technology; MESFET; dielectric resonator oscillator; frequency 26 GHz; integrated on-chip; Dielectric devices; Gallium arsenide; MESFET integrated circuits; Noise measurement; Oscillators; Phase measurement; Phase noise; Power generation; Power measurement; Temperature; Ceramics; Dielectric films; Dielectric materials; Dielectric resonator oscillators;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Symposium Digest, 2009. MTT '09. IEEE MTT-S International
Conference_Location :
Boston, MA
ISSN :
0149-645X
Print_ISBN :
978-1-4244-2803-8
Electronic_ISBN :
0149-645X
Type :
conf
DOI :
10.1109/MWSYM.2009.5165894
Filename :
5165894
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2555404
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