Advanced heterogeneous integration of InP HBT and CMOS Si technologies for high performance mixed signal applications

Author

Gutierrez-Aitken, Augusto ; Chang-Chien, Patty ; Phan, Wen ; Scott, Dennis ; Oyama, Bert ; Sandhu, Randy ; Zhou, Joe ; Nam, Peter ; Hennig, Kelly ; Parlee, Matthew ; Poust, Ben ; Thai, Khanh ; Geiger, Craig ; Oki, Aaron ; Kagiwada, Reynold

Author_Institution

Northrop Grumman Space Technol., Redondo Beach, CA, USA

fYear

2009

fDate

7-12 June 2009

Firstpage

1109

Lastpage

1112

Abstract

Northrop Grumman Space Technology (NGST) is developing an advanced heterogeneous integration (AHI) process to integrate III-V semiconductor chiplets on CMOS wafers under the compound semiconductor materials on silicon (COSMOS) DARPA program. The objective of the program is to have a heterogeneous interconnect pitch and length less than 5 um to enable intimate transistor scale integration. This integration will enable significant improvement in ADC dynamic range and bandwidth.

Keywords

CMOS integrated circuits; III-V semiconductors; heterojunction bipolar transistors; indium compounds; mixed analogue-digital integrated circuits; silicon; silicon radiation detectors; CMOS Si technology; III-V semiconductor; InP HBT; advanced heterogeneous integration process; compound semiconductor material; mixed signal application; silicon; Bandwidth; CMOS process; CMOS technology; Dynamic range; Heterojunction bipolar transistors; III-V semiconductor materials; Indium phosphide; Semiconductor materials; Silicon; Space technology; Analog-digital conversion; CMOSFETs; Heterogeneous Integration; Heterojunction bipolar transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 2009. MTT '09. IEEE MTT-S International

Conference_Location

Boston, MA

ISSN

0149-645X

Print_ISBN

978-1-4244-2803-8

Electronic_ISBN

0149-645X

Type

conf

DOI

10.1109/MWSYM.2009.5165895

Filename

5165895