Title :
Advanced heterogeneous integration of InP HBT and CMOS Si technologies for high performance mixed signal applications
Author :
Gutierrez-Aitken, Augusto ; Chang-Chien, Patty ; Phan, Wen ; Scott, Dennis ; Oyama, Bert ; Sandhu, Randy ; Zhou, Joe ; Nam, Peter ; Hennig, Kelly ; Parlee, Matthew ; Poust, Ben ; Thai, Khanh ; Geiger, Craig ; Oki, Aaron ; Kagiwada, Reynold
Author_Institution :
Northrop Grumman Space Technol., Redondo Beach, CA, USA
Abstract :
Northrop Grumman Space Technology (NGST) is developing an advanced heterogeneous integration (AHI) process to integrate III-V semiconductor chiplets on CMOS wafers under the compound semiconductor materials on silicon (COSMOS) DARPA program. The objective of the program is to have a heterogeneous interconnect pitch and length less than 5 um to enable intimate transistor scale integration. This integration will enable significant improvement in ADC dynamic range and bandwidth.
Keywords :
CMOS integrated circuits; III-V semiconductors; heterojunction bipolar transistors; indium compounds; mixed analogue-digital integrated circuits; silicon; silicon radiation detectors; CMOS Si technology; III-V semiconductor; InP HBT; advanced heterogeneous integration process; compound semiconductor material; mixed signal application; silicon; Bandwidth; CMOS process; CMOS technology; Dynamic range; Heterojunction bipolar transistors; III-V semiconductor materials; Indium phosphide; Semiconductor materials; Silicon; Space technology; Analog-digital conversion; CMOSFETs; Heterogeneous Integration; Heterojunction bipolar transistors;
Conference_Titel :
Microwave Symposium Digest, 2009. MTT '09. IEEE MTT-S International
Conference_Location :
Boston, MA
Print_ISBN :
978-1-4244-2803-8
Electronic_ISBN :
0149-645X
DOI :
10.1109/MWSYM.2009.5165895
