• DocumentCode
    2555460
  • Title

    The variation of optical absorption edge with sintering time for the ceramic ZnO + xMnO2-Bi2O3-TiO2

  • Author

    Rizwan, Zahid ; Zakaria, Azmi

  • Author_Institution
    Dept. of App. Sci., Nat. Textile Univ., Faisalabad
  • fYear
    2008
  • fDate
    25-27 Nov. 2008
  • Firstpage
    541
  • Lastpage
    544
  • Abstract
    Photopyroelectric spectroscopy is used to study the variation of optical absorption of the ceramic xMnO2 - 0.4 Bi2O3 - 0.4 TiO2 - ZnO, x = 0, 0.4 mol% sintered for 1 - 4 hours at the isothermal temperature, 1220 oC. The wavelength of incident light, modulated at 12 Hz, is kept in the range 310 to 810 nm. The band-gap energy is reduced from 3.2 eV (for pure ZnO) to 2.83 eV for 0 mol% MnO2 for 1 hour sintering time and decreases further with the further increase of sintering time. Eg is decreased to 2.39 eV for 1 hour sintering time after the addition of 0.4 mol% of MnO2 in the ceramic combination. It is reduced to a value 1.9 eV with the further increase of sintering time. The variation of steepness factor sigmaA and sigmaB which characterizes the slop of exponential optical absorption, is correlated with the variation of Eg, sintering time and doping of MnO2. Microstructure and compositional analysis of the selected areas are analyzed using SEM and EDAX.
  • Keywords
    X-ray chemical analysis; bismuth compounds; ceramics; doping; energy gap; manganese compounds; pyroelectricity; scanning electron microscopy; sintering; titanium compounds; zinc compounds; EDAX; SEM; ZnO-MnO2-Bi2O3-TiO2; band-gap energy; ceramic; compositional analysis; doping; frequency 12 Hz; incident light wavelength; isothermal temperature; microstructure; optical absorption edge; photopyroelectric spectroscopy; sintering; steepness factor; temperature 1220 degC; time 1 hour to 4 hour; Absorption; Bismuth; Ceramics; Doping; Isothermal processes; Optical modulation; Photonic band gap; Spectroscopy; Temperature; Zinc oxide;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Electronics, 2008. ICSE 2008. IEEE International Conference on
  • Conference_Location
    Johor Bahru
  • Print_ISBN
    978-1-4244-3873-0
  • Electronic_ISBN
    978-1-4244-2561-7
  • Type

    conf

  • DOI
    10.1109/SMELEC.2008.4770383
  • Filename
    4770383