Title :
A 9 GS/s 2.1..2.2 GHz bandpass delta-sigma modulator for Class-S power amplifier
Author :
Ostrovskyy, P. ; Gustat, H. ; Scheytt, Ch ; Manoli, Y.
Author_Institution :
IHP GmbH, Frankfurt (Oder), Germany
Abstract :
A tunable fourth-order bandpass delta-sigma modulator (BDSM) designed and fabricated in 0.25 mum SiGe BiCMOS technology is presented. The input band can be tuned in a range of 2.1 to 2.2 GHz while clocking at 9 GHz. The modulator achieves 42-43 dB signal-to-noise ratio (SNR) in 10 MHz bandwidth with sine wave input over the tuning range consuming 270 mW from -3 V supply. Measurement results show that the circuit is well suited for Class-S power amplifier applications using WCDMA coding scheme. For a WCDMA modulated signal the modulator demonstrates less than 2.3 % of EVM over the full tuning range.
Keywords :
BiCMOS integrated circuits; Ge-Si alloys; UHF filters; UHF integrated circuits; UHF power amplifiers; band-pass filters; code division multiple access; delta-sigma modulation; BiCMOS technology; SiGe; UHF filters; UHF power amplifiers; WCDMA coding; bandpass filters; bandwidth 10 MHz; delta-sigma modulator; frequency 2.1 GHz to 2.2 GHz; frequency 9 GHz; power 270 mW; size 0.25 mum; voltage -3 V; BiCMOS integrated circuits; Circuit optimization; Clocks; Delta modulation; Germanium silicon alloys; Multiaccess communication; Power amplifiers; Signal to noise ratio; Silicon germanium; Tunable circuits and devices; WCDMA; bandpass ADC; class-S; continuous time; power amplifiers; sigma-delta modulation;
Conference_Titel :
Microwave Symposium Digest, 2009. MTT '09. IEEE MTT-S International
Conference_Location :
Boston, MA
Print_ISBN :
978-1-4244-2803-8
Electronic_ISBN :
0149-645X
DOI :
10.1109/MWSYM.2009.5165900
