The effect of annealing temperatures on zinc oxide thin films properties for electronic devices application

Author

Mamat, M.H. ; Sahdan, M.Z. ; Amizam, S. ; Rafaie, H.A. ; Khusaimi, Z. ; Ahmed, A. Zain ; Abdullah, S. ; Rusop, M.

Author_Institution

Solar Cell Lab., Univ. Teknol. MARA, Shah Alam

fYear

2008

fDate

25-27 Nov. 2008

Firstpage

566

Lastpage

570

Abstract

Zinc Oxide (ZnO) thin films were prepared on glass substrates using sol-gel coating method and the effect of annealing temperatures on the ZnO properties were investigated. The Current-Voltage (I-V) measurement shows electrical properties are improved with annealing temperatures. X-ray diffraction (XRD) spectra indicate annealed samples having preferential growth at (002) plane and the structural properties improved at higher annealing temperature. Absorption coefficient of ZnO thin films in ultraviolet (UV) region also improved with annealing temperatures.

Keywords

II-VI semiconductors; X-ray diffraction; absorption coefficients; annealing; semiconductor growth; semiconductor thin films; sol-gel processing; ultraviolet spectra; wide band gap semiconductors; zinc compounds; (002) plane; X-ray diffraction; ZnO; absorption coefficient; annealing; current-voltage measurement; electronic device application; glass substrates; preferential growth; sol-gel coating; structural property; ultraviolet (UV) region; zinc oxide thin films; Annealing; Coatings; Current measurement; Electric variables measurement; Glass; Temperature; Thin film devices; Transistors; X-ray diffraction; Zinc oxide;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Electronics, 2008. ICSE 2008. IEEE International Conference on

Conference_Location

Johor Bahru

Print_ISBN

978-1-4244-3873-0

Electronic_ISBN

978-1-4244-2561-7

Type

conf

DOI

10.1109/SMELEC.2008.4770389

Filename

4770389