• DocumentCode
    2555629
  • Title

    The effect of annealing temperature on the electrical and optical properties of nanostructured ZNO for UV sensing applications

  • Author

    Sahdan, Mohd Zainizan ; Kamaruddin, S.A. ; Mamat, M.H. ; Khusaimi, Z. ; Noor, U.M. ; Saim, Hashim ; Ahmed, A.Z. ; Abdullah, S. ; Rusop, M.

  • Author_Institution
    Fac. of Electr. Eng., Univ. Teknol. MARA, Shah Alam
  • fYear
    2008
  • fDate
    25-27 Nov. 2008
  • Firstpage
    571
  • Lastpage
    575
  • Abstract
    Zinc Oxide (ZnO) is a promising candidate for UV sensing applications because of its direct bandgap energy of 3.37 eV and very sensitive to UV light. In this work, we present the effect of annealing temperature on the electrical and optical properties of nanostructured ZnO for UV sensing applications. The SEM results indicate that the surface morphologies of nanostructured ZnO varies with annealing temperatures. The electrical and optical properties are strongly correlated to the shape and size of the nanostructured ZnO. Nanostructured ZnO has fast UV photoresponse with cut-off wavelength ~400 nm. Annealing at 500degC has resulted highest UV absorption and photocurrent response compare to other annealing temperatures. This indicates that annealing temperature has strong effect to the electrical and optical properties of nanostructured ZnO.
  • Keywords
    II-VI semiconductors; annealing; nanosensors; nanostructured materials; photoconductivity; scanning electron microscopy; surface morphology; thermal analysis; ultraviolet detectors; wide band gap semiconductors; zinc compounds; SEM; UV absorption; UV photoresponse; UV sensing applications; ZnO; annealing temperature effect; electrical property; electron volt energy 3.37 eV; nanostructured zinc oxide; optical property; photocurrent response; surface morphology; temperature 500 C; Annealing; Electromagnetic wave absorption; Optical sensors; Optical surface waves; Photoconductivity; Photonic band gap; Shape; Surface morphology; Temperature sensors; Zinc oxide;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Electronics, 2008. ICSE 2008. IEEE International Conference on
  • Conference_Location
    Johor Bahru
  • Print_ISBN
    978-1-4244-3873-0
  • Electronic_ISBN
    978-1-4244-2561-7
  • Type

    conf

  • DOI
    10.1109/SMELEC.2008.4770390
  • Filename
    4770390