DocumentCode
2555629
Title
The effect of annealing temperature on the electrical and optical properties of nanostructured ZNO for UV sensing applications
Author
Sahdan, Mohd Zainizan ; Kamaruddin, S.A. ; Mamat, M.H. ; Khusaimi, Z. ; Noor, U.M. ; Saim, Hashim ; Ahmed, A.Z. ; Abdullah, S. ; Rusop, M.
Author_Institution
Fac. of Electr. Eng., Univ. Teknol. MARA, Shah Alam
fYear
2008
fDate
25-27 Nov. 2008
Firstpage
571
Lastpage
575
Abstract
Zinc Oxide (ZnO) is a promising candidate for UV sensing applications because of its direct bandgap energy of 3.37 eV and very sensitive to UV light. In this work, we present the effect of annealing temperature on the electrical and optical properties of nanostructured ZnO for UV sensing applications. The SEM results indicate that the surface morphologies of nanostructured ZnO varies with annealing temperatures. The electrical and optical properties are strongly correlated to the shape and size of the nanostructured ZnO. Nanostructured ZnO has fast UV photoresponse with cut-off wavelength ~400 nm. Annealing at 500degC has resulted highest UV absorption and photocurrent response compare to other annealing temperatures. This indicates that annealing temperature has strong effect to the electrical and optical properties of nanostructured ZnO.
Keywords
II-VI semiconductors; annealing; nanosensors; nanostructured materials; photoconductivity; scanning electron microscopy; surface morphology; thermal analysis; ultraviolet detectors; wide band gap semiconductors; zinc compounds; SEM; UV absorption; UV photoresponse; UV sensing applications; ZnO; annealing temperature effect; electrical property; electron volt energy 3.37 eV; nanostructured zinc oxide; optical property; photocurrent response; surface morphology; temperature 500 C; Annealing; Electromagnetic wave absorption; Optical sensors; Optical surface waves; Photoconductivity; Photonic band gap; Shape; Surface morphology; Temperature sensors; Zinc oxide;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Electronics, 2008. ICSE 2008. IEEE International Conference on
Conference_Location
Johor Bahru
Print_ISBN
978-1-4244-3873-0
Electronic_ISBN
978-1-4244-2561-7
Type
conf
DOI
10.1109/SMELEC.2008.4770390
Filename
4770390
Link To Document