Title :
Feasibility study of a novel asymmetric SGOI-TFET using non-local BTBT model
Author :
Chander, S. ; Baishya, S.
Author_Institution :
Dept. of ECE, NIT Silchar, Silchar, India
Abstract :
This work presents a novel 30 nm n-channel Silicon Germanium-on-Insulator (SGOI) based Tunnel Field Effect transistor with asymmetric source/drain material using Non-Local Band-to-Band tunneling model, where we have observed the better switching characteristic. This work also shows that the Miller capacitance is very small using Non-Local BTBT model with bandgap lowering. We also observed the effect of position of spacers and overlap/underlap of gate, with source/drain regions using non-local tunneling model. All the simulation is done by Synopsys TCAD where we have observed a high Ion/Ioff ratio of 2.290×109 and a steepest average subthreshold swing of 36 mV/decade.
Keywords :
field effect transistors; silicon-on-insulator; tunnel transistors; Synopsys TCAD; asymmetric SGOI-TFET; asymmetric drain material; asymmetric source material; bandgap lowering; n-channel silicon germanium-on-insulator; nonlocal BTBT model; nonlocal band-to-band tunneling model; size 30 nm; switching characteristic; tunnel field effect transistor; Capacitance; Field effect transistors; Hafnium compounds; Logic gates; Materials; Switches; Tunneling; Band-to-Band Tunneling; Overlap/Underlap; Silicon Germanium On Insulator; Subthreshold Swing;
Conference_Titel :
India Conference (INDICON), 2014 Annual IEEE
Conference_Location :
Pune
Print_ISBN :
978-1-4799-5362-2
DOI :
10.1109/INDICON.2014.7030530
