Title :
Failure analysis of noise characteristics in GaAs MESFETs with parametric modeling approach
Author :
Mun, Jae Kyoung ; Kim, Haecheon ; Kim, Chung-Hwan ; Kim, Min-Gun ; Lee, Jae Jin ; Pyun, Kwang-Eui
Author_Institution :
Div. of Semicond. Technol., Electron. & Telecommun. Res. Inst., Taejon, South Korea
Abstract :
The noise degradation of GaAs MESFETs was investigated by thermal step stress tests with no bias in atmosphere. Minimum noise figure, associated gain, scattering parameters, and C-V profiles were measured during the tests. The noise degradation is mainly attributed to the decrease of AC transconductance, resulting from the carrier compensation by Ga vacancies in the channel. The decrease of effective carrier concentration resulting from the thermally activated interdiffusion between the gate metal and the GaAs channel layer is proposed to be the main failure mechanism for noise degradation of GaAs MESFETs
Keywords :
III-V semiconductors; S-parameters; Schottky gate field effect transistors; carrier density; chemical interdiffusion; equivalent circuits; failure analysis; gallium arsenide; microwave field effect transistors; semiconductor device models; semiconductor device noise; semiconductor device reliability; semiconductor device testing; 3 GHz; AC transconductance; C-V profiles; Ga vacancies; GaAs; GaAs MESFETs; GaAs channel layer; carrier compensation; failure analysis; failure mechanism; gain; gate metal; noise characteristics; noise degradation; parametric modeling; scattering parameters; thermal step stress tests; thermally activated interdiffusion; Atmosphere; Capacitance-voltage characteristics; Failure analysis; Gallium arsenide; MESFETs; Noise figure; Scattering parameters; Testing; Thermal degradation; Thermal stresses;
Conference_Titel :
Physical & Failure Analysis of Integrated Circuits, 1997., Proceedings of the 1997 6th International Symposium on
Print_ISBN :
0-7803-3985-1
DOI :
10.1109/IPFA.1997.638342
