DocumentCode
2555691
Title
High-Q RF-MEMS tunable evanescent-mode cavity filter
Author
Park, Sang-June ; Reines, Isak ; Rebeiz, Gabriel
Author_Institution
Qualcomm Inc., San Diego, CA, USA
fYear
2009
fDate
7-12 June 2009
Firstpage
1145
Lastpage
1148
Abstract
This paper presents a high-Q tunable evanescent-mode cavity filter using capacitive RF MEMS cantilever switches with a frequency coverage of 5.5-4.3 GHz. The filter results in an insertion loss of 2.6-5.3 dB over the tuning range and a 3-dB bandwidth of 55-40 MHz (fractional bandwidth of %1). The measured Qu of the filter is 511-273 over the frequency range, which is to our knowledge, the best report Q using RF-MEMS technology.
Keywords
cavity resonator filters; microswitches; microwave devices; RF-MEMS; cantilever switches; tunable evanescent-mode cavity filter; Bandwidth; Capacitance; Cavity resonators; Coupling circuits; Radiofrequency microelectromechanical systems; Resonance; Resonant frequency; Resonator filters; Switches; Tunable circuits and devices; Capacitive cantilever switch; RF MEMS; evanescent-mode; high-Q tunable filter; waveguide filter;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest, 2009. MTT '09. IEEE MTT-S International
Conference_Location
Boston, MA
ISSN
0149-645X
Print_ISBN
978-1-4244-2803-8
Electronic_ISBN
0149-645X
Type
conf
DOI
10.1109/MWSYM.2009.5165904
Filename
5165904
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