Title :
Contactless DC connector based on ISOP-IPOS topology for high power density 380 V DC power feeding system
Author :
Hayashi, Yasuhiro ; Toyoda, Hajime ; Ise, Toshifumi ; Masumoto, Akira
Author_Institution :
Osaka Univ., Suita, Japan
Abstract :
Contactless DC connector has been proposed for high power density 380 V DC power feeding system. A LLC resonant DC-DC converter topology with GaN power transistors and Si-SBDs has been applied to realize high frequency and high efficiency inductively-coupled contactless DC connector. ISOP (input series and output parallel)-IPOS (input parallel and output series) connection topology has been also employed to develop 380 V DC connector. Prototype of a 1.2 kW 384 V-192 V DC connector to constitute a part of 384 V-384 V connector has been fabricated, and maximum efficiency of 96.5% with the ideal power density of 5.4 W/cm3 has been confirmed experimentally under 500 kHz operation. Design consideration for the proposed connector has been also conducted, and the approach for achieving higher power density of 10 W/cm3 has been presented.
Keywords :
DC-DC power convertors; III-V semiconductors; electric connectors; gallium compounds; power transistors; wide band gap semiconductors; GaN; ISOP-IPOS topology; LLC resonant DC DC converter topology; high power density DC power feeding system; inductively coupled contactless DC connector; power 1.2 kW; power transistors; voltage 380 V; voltage 384 V to 192 V; Connectors; Contacts; Density measurement; Power system measurements; RLC circuits; Resonant frequency; Topology; Contactless power supply; DC power supply; Gallium Nitride (GaN); High frequency power converter; High power density systems;
Conference_Titel :
Power Electronics and Applications (EPE'14-ECCE Europe), 2014 16th European Conference on
Conference_Location :
Lappeenranta
DOI :
10.1109/EPE.2014.6910816