Title :
Quantox analysis of SC-1 and SC-2 variables in wafer surface preparation
Author :
Sahari, Siti Kudnie ; Sing, Jane Chai Hai ; Hamid, Khairuddin Ab
Author_Institution :
Dept. of Electron., Univ. Malaysia Sarawak, Kota Samarahan
Abstract :
The effect of concentration, temperature and processing time in RCA cleaning that affect gate oxide quality are studied. This paper shows how these variables of pre-clean chemistry on the characteristic of silicon oxide as insulator material. The results indicate that gate oxide strength had correlation with RCA concentration and processing time, and, is least related to temperature.
Keywords :
insulating materials; interface states; silicon compounds; surface cleaning; tunnelling; Quantox analysis; RCA cleaning; SiO2; charge trap density; gate oxide strength; insulator material; interface trap density; pre-clean chemistry; recombination lifetime; tunneling field; wafer surface preparation; Charge measurement; Costs; Current measurement; Dielectric substrates; Pollution measurement; Silicon; Space charge; Surface contamination; Temperature; Voltage;
Conference_Titel :
Semiconductor Electronics, 2008. ICSE 2008. IEEE International Conference on
Conference_Location :
Johor Bahru
Print_ISBN :
978-1-4244-3873-0
Electronic_ISBN :
978-1-4244-2561-7
DOI :
10.1109/SMELEC.2008.4770395
