DocumentCode :
255588
Title :
SiC single switch resonant inverters performance dependence on induction load
Author :
Bernal, C. ; Avellaned, J. ; Leon, Javier ; Molina, P.
Author_Institution :
Group of Power Electron. & Microelectron. - GEPM, Univ. of Zaragoza, Zaragoza, Spain
fYear :
2014
fDate :
26-28 Aug. 2014
Firstpage :
1
Lastpage :
7
Abstract :
In this paper, a comparison between several induction loads operating in a One Switch - Zero Voltage Switching (1SW-ZVS) resonant converter is presented. The aim is to determine the optimal load for induction cooking systems from the point of view of maximizing the performance of a given active device (Si IGBT or SiC JFET) in this resonant topology.
Keywords :
invertors; silicon compounds; switching convertors; wide band gap semiconductors; zero voltage switching; SiC; induction cooking systems; induction load; one switch zero voltage switching resonant converter; optimal load; resonant topology; single switch resonant inverters; Capacitors; Coils; Resistance; Resonant frequency; Switches; Topology; Windings; Induction heating; Resonant Inverter; SiC;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Power Electronics and Applications (EPE'14-ECCE Europe), 2014 16th European Conference on
Conference_Location :
Lappeenranta
Type :
conf
DOI :
10.1109/EPE.2014.6910826
Filename :
6910826
Link To Document :
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