DocumentCode :
2555887
Title :
A case study of how pattern density affect metal etch
Author :
Ching, Bong Ching ; Yew, Huong Chung ; Tien, David Kho Ching
Author_Institution :
X-FAB Sarawak Sdn. Bhd., Kuching
fYear :
2008
fDate :
25-27 Nov. 2008
Firstpage :
629
Lastpage :
630
Abstract :
The work presented here shows the impact of different macro pattern density on the interconnect profile and CD bias after metal etch processing. These effects are shown to be due to macro loading and passivation affects which differ when wafer level pattern density is changed. The effect of passivation gas on the above phenomenon is also investigated.
Keywords :
etching; integrated circuit interconnections; passivation; CD bias; interconnect profile; macro loading; macro pattern density; metal etch; passivation; Etching; Gases; Metals industry; Passivation; Polymers; Protection; Resists; Silicon; Testing;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Electronics, 2008. ICSE 2008. IEEE International Conference on
Conference_Location :
Johor Bahru
Print_ISBN :
978-1-4244-3873-0
Electronic_ISBN :
978-1-4244-2561-7
Type :
conf
DOI :
10.1109/SMELEC.2008.4770404
Filename :
4770404
Link To Document :
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