Characterization setup for device level dynamic load modulation measurements

A dynamic load modulation characterization method is presented. The method gives insight into the device operation under dynamic load modulation conditions. The presented method is based on an active injection load-pull system. The load impedance is dynamically controlled to follow an optimum trajectory, resulting in higher efficiency in back-off operation. On-wafer measurements at 2.14 GHz using a LDMOS device are used to demonstrate the method. The measured results show excellent agreement between static characterization and dynamic measurements.