Title :
DOE study on etching rate of silicon nitride (Si3N4) layer via RIE nitride etching process
Author :
Ghazali, Nasrul Hakim ; Soetedjo, H. ; Ngah, N.A. ; Yusof, A. ; Dolah, A. ; Yahya, M.R.
Author_Institution :
Microelectron. & Nanotechnol. Programme (MENT), UPM-MTDC, Serdang
Abstract :
In the electronic device fabrication, etching is one of the important processes to do. For this work, the dry etching was done to silicon nitride layer under a CF4 / O2 gas mixture using reactive ion etching (RIE) process has been investigated. This etching process was carried out at a room temperature with gas pressure of 500 mTorr, RF power of 60-80 W, O2 and CF4 flow rate of 5-10 sccm and 40-50 sccm respectively. From the process, a statistical method of Design of Experiment (DOE) Pro XL software was utilized for appropriate analysis.
Keywords :
design of experiments; semiconductor process modelling; silicon compounds; sputter etching; Pro XL software; Si3N4; design of experiment; dry etching; etching rate; power 60 W to 80 W; pressure 500 mtorr; reactive ion etching; silicon nitride layer; temperature 293 K to 298 K; Chemical vapor deposition; Design methodology; Dielectric materials; Dry etching; Fabrication; Plasma applications; Radio frequency; Silicon; Statistical analysis; US Department of Energy; DOE; dry etching; silicon nitride;
Conference_Titel :
Semiconductor Electronics, 2008. ICSE 2008. IEEE International Conference on
Conference_Location :
Johor Bahru
Print_ISBN :
978-1-4244-3873-0
Electronic_ISBN :
978-1-4244-2561-7
DOI :
10.1109/SMELEC.2008.4770409
