DocumentCode
255608
Title
Circuit mismatch influence on performance of paralleling silicon carbide MOSFETs
Author
Helong Li ; Munk-Nielsen, Stig ; Cam Pham ; Beczkowski, Szymon
Author_Institution
Dept. of Energy Technol., Aalborg Univ., Aalborg, Denmark
fYear
2014
fDate
26-28 Aug. 2014
Firstpage
1
Lastpage
8
Abstract
This paper focuses on circuit mismatch influence on performance of paralleling SiC MOSFETs. Power circuit mismatch and gate driver mismatch influences are analyzed in detail. Simulation and experiment results show the influence of circuit mismatch and verify the analysis. This paper aims to give suggestions on paralleling discrete SiC MOSFETs and designing layout of power modules with paralleled SiC MOSFETs dies.
Keywords
MOSFET; power semiconductor devices; silicon compounds; wide band gap semiconductors; MOSFET; SiC; circuit mismatch influence; gate driver mismatch; power circuit mismatch; Integrated circuit modeling; Logic gates; MOSFET; Performance evaluation; Silicon carbide; Simulation; Transient analysis; MOSFET; Parallel operation; Silicon Carbide (SiC); Wide bandgap devices;
fLanguage
English
Publisher
ieee
Conference_Titel
Power Electronics and Applications (EPE'14-ECCE Europe), 2014 16th European Conference on
Conference_Location
Lappeenranta
Type
conf
DOI
10.1109/EPE.2014.6910835
Filename
6910835
Link To Document