Title :
Thermal oxidation and stability of thin manganese films
Author :
Zhang, Yi ; Qu, Xixin
Author_Institution :
Dept. of Sensing Technol., Beijing Inf. Tech. Inst., China
Abstract :
Microanalytical work shows that the main phase in thin Mn films is alpha Mn and that impurity elements O, C, and W, are found. The main compound formed by Mn and O in the films is MnO. The instability of thin Mn films is due to the transformations from elemental Mn to MnO and from MnO to Mn/sub 2/O/sub 3/ in the films. The metal resistance method is used to determine the oxidation kinetics of thin Mn films. It is determined that the oxide layers are protective and that under proper heat treatment the films could have satisfactory long-term thermal stability.<>
Keywords :
electronic conduction in metallic thin films; heat treatment; manganese; metallic thin films; oxidation; thin film resistors; 200 C; Mn-O-C-W; Mn/sub 2/O/sub 3/; MnO; heat treatment; long-term thermal stability; metal resistance method; microstructure; morphology; oxidation kinetics; thermal oxidation; thin Mn films; thin film resistors; Electrons; Fabrication; Kinetic theory; Manganese; Optical films; Oxidation; Substrates; Temperature; Thermal stability; Transistors;
Conference_Titel :
Electronics Components Conference, 1988., Proceedings of the 38th
Conference_Location :
Los Angeles, CA, USA
DOI :
10.1109/ECC.1988.12655
