• DocumentCode
    2556258
  • Title

    Cathodoluminescence evaluation of electrical stress condition of Si-SiO2 structures

  • Author

    Liu, X. ; Chan, D.S.H. ; Phang, J.C.H. ; Chim, W.K.

  • Author_Institution
    Centre for Integrated Circuit Failure Anal. & Reliability, Nat. Univ. of Singapore, Singapore
  • fYear
    1997
  • fDate
    21-25 Jul 1997
  • Firstpage
    270
  • Lastpage
    274
  • Abstract
    In this paper, we describe the observation of a new phenomenon which may be extended to provide a non electrical and physical evaluation of the electrical stress degradation of Si-SiO2 structures. Two novel observations, the hot-electron-injection-induced 2.7 eV luminescence centers and the interfacial stress dependence of the 2.7 eV CL peak build-up, are described
  • Keywords
    cathodoluminescence; elemental semiconductors; hot carriers; semiconductor-insulator boundaries; silicon; silicon compounds; Si-SiO2; Si-SiO2 structure; cathodoluminescence; electrical stress degradation; hot electron injection; interfacial stress; Bipolar transistors; Failure analysis; Integrated circuit reliability; Luminescence; Reliability engineering; Scanning electron microscopy; Semiconductor device measurement; Thermal degradation; Thermal stresses; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Physical & Failure Analysis of Integrated Circuits, 1997., Proceedings of the 1997 6th International Symposium on
  • Print_ISBN
    0-7803-3985-1
  • Type

    conf

  • DOI
    10.1109/IPFA.1997.638345
  • Filename
    638345
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2556258