Experimental analysis of bipolar SiC-devices for future energy distribution systems

In this study, the electrical performance of a bipolar switch (BiFET) fabricated on 4H-SiC proposed as solid state circuit breaker is discussed. Therefore, first results on the output and blocking characteristic are presented and analyzed. The bipolar switch indicates a current limiting output characteristic and robust behavior in off-state mode. Nevertheless, further improvement of the conduction properties by increasing the doping concentration in the p-type channel region has to be carried out. Furthermore, it is determined that for a clear understanding of the temperature dependency of the output characteristic, further investigations concerning the influence of the incomplete ionization, ambipolar lifetime, and emitter efficiency are mandatory.