Title :
Experimental analysis of bipolar SiC-devices for future energy distribution systems
Author :
Huerner, A. ; Mitlehner, H. ; Erlbacher, T. ; Bauer, A.J. ; Frey, Lothar
Author_Institution :
Electron Devices, Univ. of Erlangen-Nuremberg, Erlangen, Germany
Abstract :
In this study, the electrical performance of a bipolar switch (BiFET) fabricated on 4H-SiC proposed as solid state circuit breaker is discussed. Therefore, first results on the output and blocking characteristic are presented and analyzed. The bipolar switch indicates a current limiting output characteristic and robust behavior in off-state mode. Nevertheless, further improvement of the conduction properties by increasing the doping concentration in the p-type channel region has to be carried out. Furthermore, it is determined that for a clear understanding of the temperature dependency of the output characteristic, further investigations concerning the influence of the incomplete ionization, ambipolar lifetime, and emitter efficiency are mandatory.
Keywords :
bipolar transistor switches; circuit breakers; doping profiles; field effect transistors; silicon compounds; wide band gap semiconductors; 4H-SiC; BiFET; SiC; ambipolar lifetime; bipolar SiC devices; bipolar switch; conduction properties; doping concentration; electrical performance; emitter efficiency; energy distribution systems; incomplete ionization; p-type channel region; solid state circuit breaker; Abstracts; Anodes; Cathodes; Circuit breakers; Facsimile; Logic gates; Robustness; Bipolar Devices; Current Limiter; Silicon Carbide (SiC);
Conference_Titel :
Power Electronics and Applications (EPE'14-ECCE Europe), 2014 16th European Conference on
Conference_Location :
Lappeenranta
DOI :
10.1109/EPE.2014.6910847
