Title :
A new method for forming ZnTe contacts for CdTe cells [solar cells]
Author :
Mondal, Anup ; Birkmire, Robert W. ; McCandless, Brian E.
Author_Institution :
Inst. of Energy Conversion, Delaware Univ., Newark, DE, USA
Abstract :
An electrochemical technique (galvanic) has been developed for directly depositing ZnTe films doped with Cu onto evaporated CdTe/CdS/ITO/glass substrates to form a semitransparent p+ contact to the CdTe. The CdTe/CdS/ITO/glass substrates were placed in a solution containing ZnCl2 and dissolved TeO2, and were short circuited externally to a Zn electrode. Uniform, single-phase ZnTe films were obtained for specific pH, temperature, and concentration regimes of the reacting ions. Copper doping of the ZnTe films was achieved by adding an appropriate amount of Cu+2 ions complexed with triethanolamine to the solution. The results of ZnTe:Cu/CdTe/CdS solar cells fabricated using this method are discussed
Keywords :
II-VI semiconductors; cadmium compounds; copper; electrical contacts; electrodeposition; electrodeposits; semiconductor doping; semiconductor thin films; solar cells; zinc compounds; ZnTe:Cu-CdTe-CdS solar cells; doping; electrical contacts; electrochemical technique; electrode; galvanic method; semiconductor; semitransparent p+ contact; substrates; thin films; Circuits; Copper; Doping; Electrodes; Galvanizing; Glass; Indium tin oxide; Photovoltaic cells; Temperature; Zinc compounds;
Conference_Titel :
Photovoltaic Specialists Conference, 1991., Conference Record of the Twenty Second IEEE
Conference_Location :
Las Vegas, NV
Print_ISBN :
0-87942-636-5
DOI :
10.1109/PVSC.1991.169386
