The next generation high voltage IGBT modules utilizing Enhanced-Trench ET-IGBTs and Field Charge Extraction FCE-Diodes

Author

Andenna, M. ; Otani, Y. ; Matthias, S. ; Corvasce, C. ; Geissmann, S. ; Kopta, A. ; Schnell, R. ; Rahimo, Munaf

Author_Institution

Semicond., ABB Switzerland Ltd., Lenzburg, Switzerland

fYear

2014

fDate

26-28 Aug. 2014

Firstpage

1

Lastpage

11

Abstract

In this paper, we present the next generation of IGBT modules employing the latest Enhanced Trench ET-IGBT and Field Charge Extraction FCE fast diode devices. Such technologies enable high power IGBT modules to be capable of providing higher level of electrical performance in terms of low losses, good controllability, high robustness and soft diode reverse recovery. The first prototype dual modules with the new chip technologies rated at 300A and 3300V were fabricated and tested. The paper will present in detail the ET-IGBT and FCE diode concepts, the full static and dynamic electrical test results and their impact for achieving higher levels of performance in future power electronics applications.

Keywords

insulated gate bipolar transistors; power bipolar transistors; power field effect transistors; ET-IGBT; current 300 A; electrical performance; enhanced trench IGBT; fast diode device; field charge extraction FCE diodes; next generation high voltage IGBT module; power electronics application; voltage 3300 V; Capacitance; Controllability; Insulated gate bipolar transistors; Market research; Next generation networking; Performance evaluation; Semiconductor diodes; Diode; IGBT; Module; Trench;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Electronics and Applications (EPE'14-ECCE Europe), 2014 16th European Conference on

Conference_Location

Lappeenranta

Type

conf

DOI

10.1109/EPE.2014.6910854

Filename

6910854