DocumentCode :
2556472
Title :
Ultra low phase noise 2.1 GHz Colpitts oscillators using BAW resonator
Author :
El Aabbaoui, Hassan ; David, Jean-Baptiste ; De Foucauld, Emeric ; Vincent, Pierre
Author_Institution :
CEA, Minatec, Grenoble, France
fYear :
2009
fDate :
7-12 June 2009
Firstpage :
1285
Lastpage :
1288
Abstract :
This paper describes the design and the realization of a 2.1 GHz ultra low phase noise oscillator using BAW resonator and fabricated in BiCMOS technology. The oscillator is intended for a chip scale atomic clock (CSAC). Based on the Colpitts topology, two circuits have been designed and realized. These circuits can achieve a phase noise better than -83 dBc/Hz at 2 kHz offset, consume less than 10 mA and the area of the die is less than 2 mm2. To the author´s knowledge, these BAW oscillators present the lowest phase noise published in the literature.
Keywords :
BiCMOS integrated circuits; acoustic resonators; bulk acoustic wave devices; network topology; oscillators; BAW resonator; BiCMOS technology; Colpitts topology; Ultra low phase noise oscillator; chip scale atomic clock; frequency 2.1 GHz; Atomic clocks; Frequency; Gas lasers; Laser transitions; Optical resonators; Phase noise; Resonance; Stability; Vertical cavity surface emitting lasers; Voltage-controlled oscillators; BAW resonator; CSAC; Oscillator; phase noise;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Symposium Digest, 2009. MTT '09. IEEE MTT-S International
Conference_Location :
Boston, MA
ISSN :
0149-645X
Print_ISBN :
978-1-4244-2803-8
Electronic_ISBN :
0149-645X
Type :
conf
DOI :
10.1109/MWSYM.2009.5165939
Filename :
5165939
Link To Document :
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